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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION *With MT-200 package *Fast switching speed *Excellent safe operating area APPLICATIONS *High frequency power amplifiers *Audio power amplifiers *Switching regulators *DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (MT-200) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -7 -12 120 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;IB=0 B 2SA1389 MIN -160 -7 TYP. MAX UNIT V V IE=-50A; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-1A ; VCE=-10V -1.8 -1.7 -50 -1 -50 60 40 30 200 V V A mA A MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1389 Fig.2 outline dimensions 3 |
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